defect density中文是什么意思

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中文翻译
造句

缺陷密度

defect vi. 叛变；逃走。 He defected to th ...
density n. 1.稠密；浓厚。 2.【物理学】浓度；密度；比重。 ...
density defect 密度缺点
defect density distribution 缺陷密度分布
low density lipoprotein catabolic defect 低密度脂蛋白异化作用缺陷
defect n. 1.缺陷，缺点，弱点；短处。 2.不足，缺乏。 have some defect in eyesight 目力不佳。 have the defects of one's qualities 美中不足之处。 in defect of 若无…时；因无。 vi. 叛变；逃走。 He defected to the West. 他叛逃到西方。
in defect of 缺少; 若无...时
no defect 无缺陷的
density n. 1.稠密；浓厚。 2.【物理学】浓度；密度；比重。 3.愚钝，昏庸。 traffic density 交通量。 the density of population 人口密度。
acceptor defect 受体缺陷; 受主缺陷
accident defect 事故损坏
accidental defect 汽车耗损; 事故性缺陷
acquired defect 后天不足; 后天性缺损
allowable defect 容许缺陷; 允许缺陷
allowed defect 容许疵病
amorphous defect 非晶区缺陷
anion defect 阴离子亏损; 阴离子缺陷
antifrenkel defect 反弗伦凯尔缺陷
antischottky defect 反肖特基缺陷
antisite defect 反位缺陷
antistructure defect 反结构型缺陷
apparent defect 明显的缺陷
appearance defect 外表缺陷
area defect 面缺陷
arris defect 掉角

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例句与用法

Quantitative determination of ab microscopic defect density in gallium arsenide single crystal
砷化镓单晶ab微缺险密度定量检验方法
Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers
半导体工艺材料的检验.硅晶体外延层缺陷种类和缺陷密
The dislocation - free , low defects densities crystal are acquired , in which the impurities concentration is decreased , their distribution are uniform , and the gaas crystal has high uniform and purity characteristics
利用m - lec法可以消除单晶中的位错，降低缺陷密度，降低单晶中的杂质含量，并能使杂质在晶体中的分布均匀，得到晶体均匀性、纯净度都高的gaas单晶。
Compared to gan , which is one of the most successful wide - band semiconductor materials at present , zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno , 25mev for gan ) , which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile , homogeneous bulk zno is available
和gan相比， zno薄膜具有生长温度低，激子复合能高( zno ： 60mev ， gan ： 21 25mev ) ，受激辐射阈值较低，能量转换效率很高等优点。有可能实现室温下较强的紫外受激发射，制备出性能较好的探测器、发光二极管和激光二极管等光电子器件。
With plating time going on , the nano - polycrystal gathering grows in two dimensions , and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface . because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel , the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated , and then their size is smaller . the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content , the microstructure of coating turns from nano - crystalline to the amorphous
随着施镀时间的延长，纳米晶聚晶体在横向二维生长的同时，在纳米晶聚晶体的表面上也进行着三维方向的新的一层聚晶体的生长；在调质态45钢表面，由于其具有比较高的晶界和缺陷密度，因此在沉积初期，纳米晶聚晶体的成核密度也较大，从而在二维方向聚晶体的尺度较小，镀层沉积初期表现为致密细小的鳞片状组织。
Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo , tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo . as we know , band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices
利用mg _ xzn _ ( 1 - x ) o薄膜，可以在保持zno六方纤锌矿( wurtzite )结构的同时有效调节调节薄膜的禁带宽度，制备出基于氧化锌的量子阱、超晶格及相关的光电器件，如基于氧化锌的紫外光探测器、紫外发光二极管和紫外激光二极管等光电子器件。